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Title: | Optical profiling on lateral spreading of spacecharge-region metal-semiconductor-metal structures |
Authors: | Sanya Khunkhao |
Keywords: | Optical profiling lateral spreading |
Issue Date: | 4-August-2555 |
Abstract: | Optical profiling on lateral spreading of space-chargeregion properties of Schottky-barrier metal-semiconductormetal (MSM) structures have been investigated experimentally. Making use of a planar molybdenum/n-type silicon /molybdenum (Mo/n-Si/Mo) MSM structure with a wide electrode separation, one-dimensional (1D) profiling of optical– beam intensity distribution from a helium-neon (He-Ne) laser was carried out. It was also confirmed that, in addition to existing photosensing function, the sensitivity (output photocurrent) of such a structure could be controlled by an applying bias via lateral spreading of the surface space-chargeregion (SCR) at the side of the Schottky-junction reversebiased. |
URI: | http://dspace.spu.ac.th/handle/123456789/3782 |
Appears in Collections: | EGI-04. บทความที่ประชุมวิชาการ (ระดับนานาชาติ) |
Files in This Item:
File | Description | Size | Format | |
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ECTI2007.pdf | 268.2 kB | Adobe PDF | View/Open |
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