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Title: | Avalanche Gain and Shot Noise in Silicon-based Planar MSM Structures |
Authors: | Sanya Khunkhao Aphichata Thongrak Korn Puangnak Wanchai Chankaipol |
Keywords: | photocurrent shot noise MSM photodiode |
Issue Date: | 21-November-2561 |
Publisher: | The 41st Electrical Engineering Conference (EECON-41) |
Series/Report no.: | - - |
Abstract: | The properties of planar metal-semiconductor-metal (MSM) optical sensor structures on dc photocurrent gain have been investigated an experimentally. The structure has two co-planar Mo/n-Si Schottky-barrier junctions on silicon of resistivity 9-12 Ω-cm and the electrode separation is 2000 µm. The current-voltage (I-V) characteristics measurements under illumination in visible range showed a rapid increase in photocurrent at higher biases examined. The dependence of I-V characteristics and noise measurements, such photocurrent increased was ascribed to avalanche multiplication of carriers photogenerated in the Schottsky junction as applied reverse-biased. From low-frequency (10-50 kHz) signal measurements, it was found that multiplication factor larger than 100 at 10 kHz and 30 at 50 kHz was achieved. |
Description: | - |
URI: | http://dspace.spu.ac.th/handle/123456789/6581 |
ISSN: | - |
Appears in Collections: | EGI-05. บทความที่ประชุมวิชาการ (ระดับชาติ) |
Files in This Item:
File | Description | Size | Format | |
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2. Avalanche gain and shot noise in silicon-based planar MSM structures.pdf | 1.37 MB | Adobe PDF | View/Open |
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