Please use this identifier to cite or link to this item: http://dspace.spu.ac.th/handle/123456789/835
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dc.contributor.authorSanya Khunkhao-
dc.date.accessioned2551-02-25T06:55:21Z-
dc.date.available2551-02-25T06:55:21Z-
dc.date.issued2007-05-09-
dc.identifier.urihttp://dspace.spu.ac.th/handle/123456789/835-
dc.description.abstractOptical profiling on lateral spreading of space-chargeregion properties of Schottky-barrier metal-semiconductormetal (MSM) structures have been investigated experimentally. Making use of a planar molybdenum/n-type silicon /molybdenum (Mo/n-Si/Mo) MSM structure with a wide electrode separation, one-dimensional (1D) profiling of optical– beam intensity distribution from a helium-neon (He-Ne) laser was carried out. It was also confirmed that, in addition to existing photosensing function, the sensitivity (output photocurrent) of such a structure could be controlled by an applying bias via lateral spreading of the surface space-chargeregion (SCR) at the side of the Schottky-junction reversebiased.en_US
dc.language.isoen_USen_US
dc.publisherProceedings of the 2007 Electrical Engineering/Electronics,en_US
dc.relation.ispartofseriesECTI 2007en_US
dc.relation.ispartofseriesFAM1-7-4en_US
dc.titleOptical profiling on lateral spreading of spacecharge-en_US
dc.typeArticleen_US
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