Optical profiling on lateral spreading of space-chargeregion
properties of Schottky-barrier metal-semiconductormetal
(MSM) structures have been investigated experimentally.
Making use of a planar molybdenum/n-type silicon
/molybdenum (Mo/n-Si/Mo) MSM structure with a wide
electrode separation, one-dimensional (1D) profiling of optical–
beam intensity distribution from a helium-neon (He-Ne) laser
was carried out. It was also confirmed that, in addition to
existing photosensing function, the sensitivity (output
photocurrent) of such a structure could be controlled by an
applying bias via lateral spreading of the surface space-chargeregion
(SCR) at the side of the Schottky-junction reversebiased.