Optical profiling on lateral spreading of spacecharge-region metal-semiconductor-metal structures
| dc.contributor.author | Sanya Khunkhao | en_US |
| dc.date.accessioned | 2555-08-04T16:19:20Z | |
| dc.date.available | 2555-08-04T16:19:20Z | |
| dc.date.issued | 2555-08-04T16:19:20Z | |
| dc.description.abstract | Optical profiling on lateral spreading of space-chargeregion properties of Schottky-barrier metal-semiconductormetal (MSM) structures have been investigated experimentally. Making use of a planar molybdenum/n-type silicon /molybdenum (Mo/n-Si/Mo) MSM structure with a wide electrode separation, one-dimensional (1D) profiling of optical– beam intensity distribution from a helium-neon (He-Ne) laser was carried out. It was also confirmed that, in addition to existing photosensing function, the sensitivity (output photocurrent) of such a structure could be controlled by an applying bias via lateral spreading of the surface space-chargeregion (SCR) at the side of the Schottky-junction reversebiased. | en_US |
| dc.description.sponsorship | มหาวิทยาลัยศรีปทุม | en_US |
| dc.identifier.uri | http://dspace.spu.ac.th/handle/123456789/3782 | |
| dc.language.iso | other | en_US |
| dc.subject | Optical profiling | en_US |
| dc.subject | lateral spreading | en_US |
| dc.title | Optical profiling on lateral spreading of spacecharge-region metal-semiconductor-metal structures | en_US |
| dc.type | Article | en_US |