Avalanche Gain and Shot Noise in Silicon-based Planar MSM Structures

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dc.contributor.authorSanya Khunkhaoth_TH
dc.contributor.authorAphichata Thongrakth_TH
dc.contributor.authorKorn Puangnakth_TH
dc.contributor.authorWanchai Chankaipolth_TH
dc.date.accessioned2020-02-14T10:11:56Z
dc.date.available2020-02-14T10:11:56Z
dc.date.issued2561-11-21
dc.description-th_TH
dc.description.abstractThe properties of planar metal-semiconductor-metal (MSM) optical sensor structures on dc photocurrent gain have been investigated an experimentally. The structure has two co-planar Mo/n-Si Schottky-barrier junctions on silicon of resistivity 9-12 Ω-cm and the electrode separation is 2000 µm. The current-voltage (I-V) characteristics measurements under illumination in visible range showed a rapid increase in photocurrent at higher biases examined. The dependence of I-V characteristics and noise measurements, such photocurrent increased was ascribed to avalanche multiplication of carriers photogenerated in the Schottsky junction as applied reverse-biased. From low-frequency (10-50 kHz) signal measurements, it was found that multiplication factor larger than 100 at 10 kHz and 30 at 50 kHz was achieved.th_TH
dc.description.sponsorship-th_TH
dc.identifier.issn-
dc.identifier.urihttp://dspace.spu.ac.th/handle/123456789/6581
dc.language.isoenth_TH
dc.publisherThe 41st Electrical Engineering Conference (EECON-41)th_TH
dc.relation.ispartofseries-th_TH
dc.relation.ispartofseries-th_TH
dc.subjectphotocurrentth_TH
dc.subjectshot noiseth_TH
dc.subjectMSM photodiodeth_TH
dc.titleAvalanche Gain and Shot Noise in Silicon-based Planar MSM Structuresth_TH
dc.typeArticleth_TH

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